Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing
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Characteristics of strained GaAs 1 − y Sb y ( 0 . 16 y 0 . 69 ) quantum wells on InP substrates
Pseudomorphic GaAs1−ySby quantum wells with 0.16 y 0.69 on (0 0 1) InP substrates have been grown using metal–organic chemical vapour deposition. High resolution x-ray diffraction and transmission electron microscopy analysis are used to quantify the layer thicknesses and compositions. Studies of the optical properties suggest that a transition from type-I to type-II band alignment occurs at an...
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